Oxford 100 ICP

Deposition

  • SiC deposition
    • Gases: SiH4, N2, H2, C3H8
  • Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode
  • Substrate sits directly on heated electrode
  • Gas injected into process chamber via showerhead gas inlet in the top electrode
  • 0.5-1.0 Torr operating pressure
  • 0.02-0.1 Wcm-2 power density

Etching

  • Etch Gases: SF6, CF4, O2, Ar
  • Cryo DRIE up to 5 um/min
  • 4" Wafers

Process Status

A screencast of the PC attached to the oxford 100 is available by going to http://www.nanofab.utah.edu/oxford100.

Process Information

Oxford 100 DRIE SF6/C4F8 Log Sheet

 Cross Section Pictures of Results:    High Aspect Ratio    No Undercut

Location

Files

SOP:

Oxford 100 Cryo DRIE SOP in PDF Format Oxford 100 ICP 2-Step DRIE SOP in PDF Format

Spec Sheets:

Brochure_plas_100.pdf Description section from Oxford 100 Manual.pdf

Equipment Status

√ Tool is Up

Reservations Calendar

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