LPCVD Silicon-Rich Low-Stress Silicon Nitride Film
Film Deposition Parameters
Parameter | Setpoint |
Dichlorosilane Flow | 60 sccm (3 V) |
Ammonia Flow | 10 sccm (0.25 V) |
DCS:Ammonia Ratio | 6:1 |
Deposition Temperature | 825 C |
Deposition Pressure | 332 mT (166 mV) |
Film Results
Parameter | Measurement Data | |
Deposition Rate (Woollam Ellipsometer Oct 2009: Reza) | 7.4 nm/min | |
Film Stoichiometry (XPS May 2007: Loren R) | Si: 48.3% N: 51.7% | |
Stress (Wafer Bow June 2007: Divesh K) | 300 MPa | |
Index of Refraction (Woollam Ellipsometer: Mickey May 2007) | Wavelength (nm) | Index of Refraction (n) |
400 | 2.244 | |
500 | 2.205 | |
600 | 2.1839 | |
650 | 2.1768 | |
700 | 2.1711 | |
800 | 2.163 | |
900 | 2.157 | |