LPCVD Silicon-Rich Low-Stress Silicon Nitride Film

 

Film Deposition Parameters

Parameter

Setpoint

Dichlorosilane Flow

60 sccm (3 V)

Ammonia Flow

10 sccm (0.25 V)

DCS:Ammonia Ratio

6:1

Deposition Temperature

825 C

Deposition Pressure

332 mT (166 mV)

 

Film Results

Parameter

Measurement Data

Deposition Rate (Woollam Ellipsometer Oct 2009: Reza)

7.4 nm/min

Film Stoichiometry (XPS May 2007: Loren R)

Si: 48.3%  N: 51.7%

Stress (Wafer Bow June 2007: Divesh K)

300 MPa

Index of Refraction (Woollam Ellipsometer: Mickey May 2007)

Wavelength (nm)

Index of Refraction (n)

400

2.244

500

2.205

600

2.1839

650

2.1768

700

2.1711

800

2.163

900

2.157