Shipley 1813 Photoresist Procedure
Film Deposition Parameters
|
Parameter |
Setpoint |
|
Spin Speed |
3000 rpm |
|
Spin Time |
60 sec |
| Prebake Temperature | 110 C |
|
Prebake Time |
60 sec (silicon wafer), 90 sec (glass substrate) |
|
Exposure Dose |
75 mJ/cm^2 |
|
Postbake Temperature (if necessary for wet etch) |
120 C |
|
Postbake Time |
120 sec |
Film Results
|
Parameter |
Measurement Data |
|
|
Film Thickness |
2.2 um |
|
|
Minimum Linewidth (using EV 420 Aligner, 75 mJ/cm^2) |
||
|
Film Unifomity (across 4" wafer) |
||
|
Film Index of Refraction |
Wavelength (nm) |
Index of Refraction (n) |
|
400 |
|
|
|
500 |
|
|
|
600 |
|
|
|
650 |
|
|
|
700 |
|
|
|
800 |
|
|
|
900 |
|
|
- Clean Wafer, HF dip.
- Rinse and Dry wafer.
- Dehydration Bake wafer 150 C 10 minutes on wafer hotplate.
- HMDS vapor prime in YES oven.
- Use disposable plastic pipette to dispense 1 mL 1813 onto wafer.
- Spin at 3000 rpm for 60 seconds.
- Prebake on wafer hotplate at 110 C for 60 seconds.
- Expose on EV 420 for 7 seconds, or on Suss aligner for 14 seconds.
- Develop in AZ MIF 300 for 60 seconds.
- Rinse and dry wafer.
- Measure linewidth in optical microscope.
- Measure photoresist thickness with Tencor profilometer.
- Postbake if photoresist is to be used for wet etching mask.