LOR 10B Spin & Bake

  1. Clean PR off mask (if needed):
    1. Acetone
    2. IPA
    3. DI SRD
    4. O2 RIE 3min 100 W Technics Etcher
    5. DI SRD again (so PR doesn’t stick to mask in contact mode)
  2. Clean and Dehydrate Si Wafer immediately prior to spinning
    1. O2 plasma 200W
    2. 2 min
    3. Technics RIE Etcher
  3. Spin CEE 100 Spinner
    1. Use chuck that is slightly smaller than substrate
    2. Coat inside of spinner bowl with aluminum foil for easy cleanup after spinning
    3. LOR10B 3000 rpm 45 sec, ramp 2000 rpm/sec
  4. Hot plate bake wafer 200C 5 min
  5. Spin CEE 100 Spinner
    1. Use chuck that is slightly smaller than substrate
    2. S1813 3000 rpm 45 sec, ramp 2000 rpm/sec
  6. Hot plate bake wafer 110C 1 min
  7. Suss Aligner
    1. Hard N2 contact
    2. 15 sec expose 7mW/cm^2 (~105 mJ/cm^2)
  8. Develop 300MIF 30 seconds
  9. DI rinse 2 min, then place inside spin rinse drier (SRD)
  10. Microscope inspection and measurements
  11. Liftoff deposition
    1. Sputter
      1. Keep total film thickness less than 1/3 of photoresist height (PR ~2um, so film max ~670nm)
      1. Denton 80: keep power less than or equal to 50W
      1. Denton 635: keep power less than or equal to 100 W
      1. TMV: keep power less than or equal to 100 W
    2. E-gun: Keep temperature readout below 40C
  12. Liftoff in Ultrasound
    1. Fill thin glass beaker with acetone and place inside ultrasonic water bath
    2. Place wafer inside thin vertical wafer dipper and submerge thin glass beaker that has acetone inside it
    3. Turn on ultrasonic power for >5 minutes or until films have successfully lifted off
    4. Dip in IPA (do not allow to dry between steps)
    5. Rinse in DI water and then place inside SRD
  13. Remove LOR10B by submerging substrate in AZMIF300 developer for 2 minutes
  14. DI rinse 2 mine then SRD wafer