+S1813 Spin & Bake

  1. Clean PR off mask (if needed):
    1. Acetone
    2. IPA
    3. DI SRD
    4. O2 RIE 3min 100 W Technics Etcher
    5. DI SRD again (so PR doesn’t stick to mask in contact mode)
  2. Clean and Dehydrate Si Wafer immediately prior to spinning
    1. O2 plasma 200W
    2. 2 min
    3. Technics RIE Etcher
  3. Spin CEE S1813 Spinner
    1. Use chuck that is slightly smaller than substrate
    2. HMDS 3000 rpm 30 sec, ramp 2000 rpm/s
    3. S1813 3000rpm 60 sec, ramp 2000 rpm/s
  4. Hot plate bake wafer 110C 1 min (Prebake)
  5. Suss Aligner
    1. Hard N2 contact
    2. 10 sec expose 7mW/cm^2 (~70 mJ/cm^2)
  6. Develop AZ 1:1 Developer 1 minute
  7. DI rinse 2 min, then place inside spin rinse drier (SRD)
  8. Microscope inspection and measurements