CTR LPCVD Furnaces

LTO, NITRIDE, AND POLY LPCVD

Tool Owner

Kathy Anderson (kathy.anderson@utah.edu)

Process Overview

  • Four inch substrates are placed vertically into a quartz cassette.  The cassette is loaded onto a paddle which is moved into the quartz furnace chamber. 
  • Low Pressure Chemical Vapor Deposition chambers operate at low pressure and high temperature with incoming process gases that react on the substrate surface resulting in a thin film of material. 
  • Unlike thermal oxidation, deposition does not consume the silicon from the substrate.
  • Recipe names, below, are linked to the Design Your Process builder where deposition times are calculated given target thickness and according to observed deposition rates.
  • The Design Your Process builder also displays full run times next to deposition times.  Note that full run times are generally greater than 3 hours time, due the time it takes to vent the chamber, pull, load, push, pump down, ramp up in temperature, dep, ramp down, vent and pull. 

Equipment Process Name Temp °C Pressure mTorr         Resulting Material
LTO/PSG

LTO

PSG 400C 300mT

PSG 450C 200mT

400

400

450

300

300

200

O2

O2

O2

NH3

NH3

NH3

SiH4

SiH4

SiH4

 

PH3

PH3

Deposited (not thermally grown) SiO2

Phosphosilicate Glass

Phosphosilicate Glass

NITRIDE

Low Stress Nitride

NIT DEP, 200MPa

Stoichiometric

825

825

780

200

200

200

 

NH3

NH3

NH3

SiH4

SiH4

SiH4

 

Si3N4 Low Stress,

Si3N4, target stress 200MPa

Si3N4 Stoichiometric or Si rich

POLY

Undoped POLY

Doped POLY

630

630

200

250

   

SiH4

SiH4

 

PH3

Polysilicon undoped

Polysilicon n-doped with Phosphorus

SOP

CTR Operating Procedures

Materials allowed/not allowed by NMR

Substrates allowed:  Silicon, quartz, silicon carbide, silicon dioxide, silicon nitride, polysilicon

Equipment Allowed Materials Material Exclusions

LTO/PSG, NITRIDE, and POLY

Silicon

Quartz

SiC

SiO2

Si3N4

Polysilicon

Kapton tape, glass, or metals allowed on substrates.  Residual photoresist from previous photolithography steps must be removed by a pre-furnace wetclean as described in SOP.

Training Videos

HSC Reservation Training Video CTR Nitride with Measurements Training Video Furnace Data Collection Training Video

Reservations Calendar

CTR LTO CTR Nitride CTR Poly

CTR Nitride Process Characterization

A statistically designed experiment has been performed and analyzed in JMP to provide additional information for Low Stress Nitride.  Click HERE to access the analysis, which includes an interactive profiler where the values of the process variables can be changed showing the effect on the film characteristics. CTR Furnaces Parts List

Nitride Recipes Run Data:

Poly Recipes Run Data: